VisualTCAD is the latest graphical user interface for the Genius device simulator. VisualTCAD is designed to suit novice TCAD users and students, and focuses on ease of use. Using TCAD has never been as easy, no more command line or coding is required. Beginners will be able to get started within just a few minutes. On the other hand, it doesn't sacrifice the power of Genius. All the physical models and options are accessible with VisualTCAD.
Visual TCAD combines with the Genius Device Simulator to create a next-generation TCAD solution. Genius is a parallel 2D/3D TCAD device simulator, featuring a wide range of advanced physical models and simulation capabilities. Incorporating the latest parallel computation technology, the Genius Device
Simulator is able to handle large problems with 200,000 or more mesh nodes and is capable of speeding up simulation times by a factor of 10 or more
If your TCAD simulations are taking too long and you wish to improve your productivity, there is finally an option in the market. We are proud to present Genius, the next-generation 3D parallel device simulator. Genius provides unprecedented capability and performance with leading parallel computing technologies. Genius is the first commercial TCAD device simulator that scales beyond the 10-transistor barrier. With Genius, one is able to routinely simulate circuit cells like inverter, 6T SRAM, latch and flip-flop, and expect 10 fold reduction in simulation run times.
Unlike many TCAD products in the market, the Genius Device Simulator is a completely new design. Parallelism, scalability and extensibility were considered in its design goals at a very early stage. Furthermore, Genius has been constructed using the atest numerical simulation techniques and software development tools..
Gds2Mesh is a 3D TCAD model contruction tool. It takes GDSII mask layout as input, and construct the device model with predefined and customizable process rules.
High level Design and Verification – A comprehensive suite of tools for design creation and analysis using C and System C, including Catapult C and Vista.
Figure in the left shows the layout of a 0.13um CMOS NAND gate. The 0.13um process rule extracts the various layers in the mask set, and constructively build the device geometry objects via extrusion and other geometric operations. The placement of doping profiles is also based on the masks layouts.
The geometric engine is capable of re-creating slanted STI side-walls, rounded STI corners, bird's beak and other details. Mesh is generated automatically, and mesh in the channel and junction regions are refined for accurate simulation. The generated device structure can be imported in Genius for device simulation.
GSeat is an Monte-Carlo simulator for studying high-energy particles passing through semiconductor devices, and is part of the SEE (Single-Event Effects) solution of Cogenda. VisualParticle provides a user-friendly GUI to GSeat
CRad provides an integrative framework for the analysis of space radiation environment and radiation effects in microelectronics components. It features an intuitive flow-chart based GUI, following the necessary steps in the analysis of single event, total dose and NIEL effects.
VisualFab is an integrated workbench for process simulation experiments. It adopts the concepts familiar to fab engineers, e.g. process module, split, wafer and split table. It also allows user to visualize these concepts and design experiments in a user-friendly GUI
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